JPH0427711B2 - - Google Patents

Info

Publication number
JPH0427711B2
JPH0427711B2 JP56187033A JP18703381A JPH0427711B2 JP H0427711 B2 JPH0427711 B2 JP H0427711B2 JP 56187033 A JP56187033 A JP 56187033A JP 18703381 A JP18703381 A JP 18703381A JP H0427711 B2 JPH0427711 B2 JP H0427711B2
Authority
JP
Japan
Prior art keywords
conductivity type
type region
semiconductor
source
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56187033A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5889864A (ja
Inventor
Hideshi Ito
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56187033A priority Critical patent/JPS5889864A/ja
Publication of JPS5889864A publication Critical patent/JPS5889864A/ja
Publication of JPH0427711B2 publication Critical patent/JPH0427711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
JP56187033A 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置 Granted JPS5889864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187033A JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187033A JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Publications (2)

Publication Number Publication Date
JPS5889864A JPS5889864A (ja) 1983-05-28
JPH0427711B2 true JPH0427711B2 (en]) 1992-05-12

Family

ID=16199000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187033A Granted JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Country Status (1)

Country Link
JP (1) JPS5889864A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575334B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
JPH07120798B2 (ja) * 1988-03-18 1995-12-20 三洋電機株式会社 縦型ｍｏｓｆｅｔ
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
JPH02189977A (ja) * 1989-01-18 1990-07-25 Nec Corp 半導体装置
US6344379B1 (en) 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499577A (en) * 1979-01-16 1979-08-06 Hitachi Ltd Semiconductor assembly

Also Published As

Publication number Publication date
JPS5889864A (ja) 1983-05-28

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